Electrical properties of ZrO2 and YSZ films deposited by pulsed laser deposition

Polycrystalline ZrO2 and yttria-stabilized ZrO2 thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed-laser-deposition methods. Pt/ZrO2/Pt and Pt/YSZ/Pt capacitor structures show giant conductivity switching behaviors which can be utilized for nonvolatile memory devices. Maximum on/off ratio of 106 and good endurance even after 105 times conductivity switching are observed in a typical Pt/ZrO2/Pt whose ZrO2 film has been deposited at 100 degrees C and at an oxygen pressure of 50 mTorr. The Pt/ZrO2/Pt structure exhibits two' ohmic behaviors in the low-voltage region (V < 1.4 V), depending on the value of previously applied high voltage, and Schottky-type conduction in the high-voltage region (1.4 V < V < 8.9 V). It seems that conductivity switching behaviors in our Pt/ZrO2/Pt structure result from changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages. A Pt/YSZ/Pt capacitor structure has more stable reset voltage and current state than a Pt/ZrO2/Pt capacitor structure. Moreover, a Pt/YSZ/Pt capacitor structure shows higher conductivity than a Pt/ZrO2/Pt capacitor structure, which may result from substitution of Y3+ ions for Zr4+ ions.