Review on spintronics: Principles and device applications

被引：1007

作者：

Hirohata, Atsufumi ^{[1
]}

Yamada, Keisuke ^{[2
]}

Nakatani, Yoshinobu ^{[3
]}

Prejbeanu, Ioan-Lucian ^{[4
]}

Dieny, Bernard ^{[4
]}

Pirro, Philipp ^{[5
,6
]}

Hillebrands, Burkard ^{[5
,6
]}

机构：

[1] Univ York, Dept Elect Engn, York YO10 5DD, N Yorkshire, England

[2] Gifu Univ, Dept Chem & Biomol Sci, Gifu 5011112, Japan

[3] Univ Electrocommun, Grad Sch Informat & Engn, Chofu, Tokyo 1828585, Japan

[4] Univ Grenoble Alpes, SPINTEC, CEA, CNRS, F-38000 Grenoble, France

[5] Tech Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany

[6] Tech Univ Kaiserslautern, Landesforschungszentrum OPTIMAS, D-67663 Kaiserslautern, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2020年 / 509卷

基金：

英国工程与自然科学研究理事会;

关键词：

Spintronics; Spin-current generation; Spin-transfer torque; Spin-orbit effects; Electric field; Electromagnetic wave; Spin Hall effects; Spin Seebeck effect; Spin Nernst effect; Magnetic sensor; Hard disk drive; Magnetic random access memory; Racetrack memory; Neuromorphic; Magnetic skyrmion; Landau-Lifshits-Gilbert equation; Magnetic damping; Dzyaloshinskii-Moriya interaction; ELECTRICAL SPIN-INJECTION; DOMAIN-WALL MOTION; ROOM-TEMPERATURE; GIANT MAGNETORESISTANCE; FERROMAGNETIC SEMICONDUCTOR; TOPOLOGICAL-INSULATOR; HIGHLY EFFICIENT; TRANSFER TORQUE; PERPENDICULAR-ANISOTROPY; OSCILLATOR DRIVEN;

D O I：

10.1016/j.jmmm.2020.166711

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to reduce their power consumption and to increase their memory and processing capabilities. Such devices utilise the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments. In these devices, the spin polarisation is controlled either by magnetic layers used as spin-polarisers or analysers or via spin-orbit coupling. Spin waves can also be used to carry spin current. In this review, the fundamental physics of these phenomena is described first with respect to the spin generation methods as detailed in Sections 2 similar to 9. The recent development in their device applications then follows in Sections 10 and 11. Future perspectives are provided at the end.

引用

页数：28

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