Photoluminescence in Er(TTA)3(Phen) thin film

Erbium doped system such as oxides, fluorides, etc. have been studied extensively in the past and a large number of erbium based laser devices are available, ranging from visible to infrared wavelengths. Miniaturization of these devices with improved qualities and performances is the need of today. Organic materials provide such laser host media. In the present investigation Er(TTA)(3)(phen) organic material has been synthesized and thin films are prepared by the vacuum deposition technique. The formation of crystalline thin films has been checked by XRD measurements. SEM results show particles of almost uniform sizes (average particle size is 0.53 mu m) in the thin film. The Er3+ ion emissoin line is observed at 843 nm due to S-4(3/2) --> I-4(13/2) laser transitions and is important for stimulation emission. The Er(TTA)(3)(phen) thin film may probably be used in the development of laser devices.