Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC

被引：12

作者：

Gallstrom, Andreas ^{[1
]}

Magnusson, Bjorn ^{[1
,2
]}

Beyer, Franziska C. ^{[1
]}

Gali, Adam ^{[3
,4
]}

Son, N. T. ^{[1
]}

Leone, Stefano ^{[1
]}

Ivanov, Ivan G. ^{[1
]}

Hemmingsson, Carl G. ^{[1
]}

Henry, Anne ^{[1
]}

Janzen, Erik ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Norstel AB, SE-60238 Norrkoping, Sweden

[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

[4] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

来源：

PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 10期

关键词：

Deep level defect; PL; Transition metal; SILICON-CARBIDE; VANADIUM; DEFECTS;

D O I：

10.1016/j.physb.2011.09.062

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Several optically observed deep level defects in SiC are still unidentified and little is published on their behavior. One of the commonly observed deep level defects in semi-insulating SiC is UD-1. This report suggests that UD-1 is Tungsten related, based on a doping study and previously reported deep level transient spectroscopy data, as well as photo-induced absorption measurements. The electronic levels involved in the optical transitions of UD-1 are also deduced. The transitions observed in the photoluminescence of UD-1 are from a Gamma(C3v)(4), to two different final states, which transform according to Gamma(C3v)(5)circle plus Gamma(C3v)(6) and Gamma(C3v)(4), respectively. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1462 / 1466

页数：5

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