Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC

被引：12

作者：

Gallstrom, Andreas ^{[1
]}

Magnusson, Bjorn ^{[1
,2
]}

Beyer, Franziska C. ^{[1
]}

Gali, Adam ^{[3
,4
]}

Son, N. T. ^{[1
]}

Leone, Stefano ^{[1
]}

Ivanov, Ivan G. ^{[1
]}

Hemmingsson, Carl G. ^{[1
]}

Henry, Anne ^{[1
]}

Janzen, Erik ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Norstel AB, SE-60238 Norrkoping, Sweden

[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

[4] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

来源：

PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 10期

关键词：

Deep level defect; PL; Transition metal; SILICON-CARBIDE; VANADIUM; DEFECTS;

D O I：

10.1016/j.physb.2011.09.062

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Several optically observed deep level defects in SiC are still unidentified and little is published on their behavior. One of the commonly observed deep level defects in semi-insulating SiC is UD-1. This report suggests that UD-1 is Tungsten related, based on a doping study and previously reported deep level transient spectroscopy data, as well as photo-induced absorption measurements. The electronic levels involved in the optical transitions of UD-1 are also deduced. The transitions observed in the photoluminescence of UD-1 are from a Gamma(C3v)(4), to two different final states, which transform according to Gamma(C3v)(5)circle plus Gamma(C3v)(6) and Gamma(C3v)(4), respectively. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1462 / 1466

页数：5

共 50 条

[1] Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
Gallstrom, A.
Magnusson, B.
Beyer, F. C.
Gali, A.
Son, N. T.
Leone, S.
Lyanov, I. G.
Henry, A.
Hemmingsson, C. G.
Janzen, E.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 211 - +
[2] Diffusion of light elements in 4H-and 6H-SiC
Linnarsson, MK
Janson, MS
Karlsson, S
Schöner, A
Nordell, N
Svensson, BG
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 275 - 280
[3] Impact ionization of nitrogen in 4H-and 6H-SiC
Sankin, V. I.
Petrov, A. G.
Kaliteevski, M.
JOURNAL OF APPLIED PHYSICS, 2013, 114 (06)
[4] Temperature dependence of refractive indices for 4H-and 6H-SiC
Xu, Chunhua
Wang, Shunchong
Wang, Gang
Liang, Jingkui
Wang, Shanpeng
Bai, Lei
Yang, Junwei
Chen, Xiaolong
JOURNAL OF APPLIED PHYSICS, 2014, 115 (11)
[5] Raman study of Ni and Ni silicide contacts on 4H-and 6H-SiC
Cichon, Stanislav
Machac, Petr
Barda, Bohumil
Machovic, Vladimir
Slepicka, Petr
THIN SOLID FILMS, 2012, 520 (13) : 4378 - 4388
[6] Temperature-dependent infrared optical properties of 3C-,4H-and 6H-SiC
Tong, Zhen
Liu, Linhua
Li, Liangsheng
Bao, Hua
PHYSICA B-CONDENSED MATTER, 2018, 537 : 194 - 201
[7] Structural analyses for SiC and AlGaN grown on off-axis 4H-and 6H-SiC
Jones, K. A.
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (10) : 2417 - 2426
[8] Temperature dependence of optical absorption coefficient of 4H-and 6H-SiC from room temperature to 300 °C
Watanabe, Naoki
Kimoto, Tsunenobu
Suda, Jun
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)
[9] Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes
Kimoto, T
Miyamoto, N
Matsunami, H
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 349 - 352
[10] Electrical and optical characterisation of vanadium in 4H and 6H-SiC
Lauer, V
Brémond, G
Souifi, A
Guillot, G
Chourou, K
Anikin, M
Madar, R
Clerjaud, B
Naud, C
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 248 - 252

← 1 2 3 4 5 →