Coulomb interactions and the metal-insulator transition in p-SiGe

被引：1

作者：

Coleridge, PT ^{[1
]}

Lapointe, J ^{[1
]}

Williams, RL ^{[1
]}

Zawadzki, P ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 11卷 / 2-3期

关键词：

metal-insulator transition; p-SiGe;

D O I：

10.1016/S1386-9477(01)00196-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnetoresistance data in p-SiGe samples is analysed using the Renormalisation Group theories of Finkel'stein and Castellani et al. The interaction parameter, gamma (2) is found to be of order one or larger than one, sufficient to explain the metallic behaviour in terms of delocalising Coulomb interaction corrections, Published by Elsevier Science B.V.

引用

页码：167 / 170

页数：4

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