Homoepitaxial growth of diamond single-phase thin films by pulsed laser ablation of graphite

被引：17
作者：
Yoshitake, T
Nishiyama, T
Nagayama, K
机构：
[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
[2] Kyushu Univ, Dept Aeronaut & Astronaut, Higashi Ku, Fukuoka 8128581, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 6A期
关键词：
ablation; diamond; thin film; homo-growth;
D O I：
10.1143/JJAP.40.L573
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Diamond thin films were gown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The optimum oxygen atmosphere of 5 x 10(-2) Torr can etch the sp(2) bonding fractions preferentially. At substrate temperatures between 550 degreesC and 600 degreesC. single-phase diamond films consisting of diamond crystal with diameters of 1-5 mum could be grown. The results demonstrated that the diamond thin films can be homo-grown using PLD by the optimization of the deposition parameters such as the oxygen pressure and the substrate temperature.
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收藏
页码：L573 / L575
页数：3
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