Growth of oriented polycrystalline α-HgI2 films by ultrasonic-wave-assisted physical vapor deposition

被引：12

作者：

Yang, Weiguang ^{[1
]}

Nie, Lei ^{[1
]}

Li, Dongmei ^{[1
]}

Wang, Yali ^{[2
]}

Zhou, Jie ^{[1
]}

Ma, Lei ^{[1
]}

Wang, Zhenhua ^{[1
]}

Shi, Weimin ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engineer, Shanghai 200072, Peoples R China

[2] Shanghai Univ, Sch Mat Sci & Engineer, Nanosci & Nanotechnol Res Ctr, Shanghai 200444, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 324卷 / 01期

基金：

美国国家科学基金会; 中国博士后科学基金;

关键词：

Characterization; Morphology; Growth from vapor; Physical vapor phase deposition processes; Inorganic compounds; Semiconducting mercury compounds; SINGLE-CRYSTALS; THICK-FILMS; DETECTORS;

D O I：

10.1016/j.jcrysgro.2011.04.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Polycrystalline alpha-HgI2 thick films have been grown on ITO-coated glass substrates using ultrasonic-wave-assisted vapor phase deposition (UWAVPD) with the different source temperatures and ultrasonic frequencies. The influence of the assisted ultrasonic wave and source temperature on the structural and electrical properties of the polycrystalline alpha-HgI2 films is investigated. It is found that the assisted ultrasonic wave plays an important role in the improvement of the structural and electrical properties. An uniformly oriented polycrystalline alpha-HgI2 film with clear facets and narrow size distribution can be obtained at the source temperature of 80 degrees C under the assistance of 59 KHz ultrasonic frequency with the ultrasonic power of 200 W, which has the lowest value of rho=2.2 X 10(12) Omega for E-field parallel to c-axis, approaching to that of high quality alpha-HgI2 single crystals (4.0 X 10(12) Omega cm). (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：149 / 153

页数：5

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