An organic field-effect transistor with programmable polarity

被引：48
作者：
Naber, RCG
Blom, PWM
Gelinck, GH
Marsman, AW
de Leeuw, DM
机构：
[1] Univ Groningen, Mat Sci Ctr Plus, NL-9747 AG Groningen, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源：
ADVANCED MATERIALS | 2005年 / 17卷 / 22期
关键词：
D O I：
10.1002/adma.200500561
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Selective ambipolar transport in solution-processed polymer ferroelectric field-effect transistors (FeFETs) is reported. Depending on the polarization state of the ferroelectric, either remanent hole or electron accumulation is achieved in the transistor, as illustrated by a butterfly-shaped current-voltage (I-V) transfer curve (see Figure). For memory purposes, the polarity of the channel can be easily read using the change in drain current in response to a small gate voltage.
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收藏
页码：2692 / +
页数：5
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