Polariton enhanced infrared reflection of epitaxial graphene

被引：19

作者：

Daas, B. K. ^{[1
]}

Daniels, K. M. ^{[1
]}

Sudarshan, T. S. ^{[1
]}

Chandrashekhar, M. V. S. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect & Comp Engn, Columbia, SC 29208 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 11期

基金：

美国国家科学基金会;

关键词：

PLASMONICS; SCATTERING; TERAHERTZ; LAYER; GAS;

D O I：

10.1063/1.3666069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show SiC substrate phonon-induced surface plasmon polariton (SPP) formation in epitaxial graphene grown on 4H-SiC, in SiC's restrahlen band (8-10 mu m). By fitting measurement to theory, we extract thickness, momentum scattering time (tau), sheet carrier density (n(s)), and estimate carrier mobility. By showing that tau proportional to 1 root n(s), we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. SPP formation finds application in nanophotonic devices for optical computing because of graphene's unique plasmonic properties. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3666069]

引用

页数：6

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