High-efficiency parallel-circuit class-E power amplifier with distributed T-shaped compensation circuit

被引：11

作者：

Cheng, Qian-Fu ^{[1
]}

Fu, Hai-Peng ^{[1
]}

Zhu, Yuan-Yuan ^{[1
]}

Ma, Jian-Guo ^{[1
]}

机构：

[1] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2016年 / 13卷 / 15期

基金：

中国国家自然科学基金;

关键词：

power amplifier (PA); parallel-circuit class-E; high efficiency; enhanced maximum operating frequency;

D O I：

10.1587/elex.13.20160570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reports a modified parallel-circuit class-E power amplifier (PA) that maintains its operating conditions even when the output capacitance of the transistor is greater the optimum capacitance. The finite inductor in the parallel topology is replaced by an L-C T-shaped circuit to eliminate the limits on the maximum operating frequency. The L-C T-shaped circuit can be approximately transformed to the distributed for the microwave applications. The analysis is validated by simulation and measurement. The fabricated PA deliver a maximum drain efficiency of 77.5% with the maximum output power of 40.2 dBm at 2.9 GHz.

引用

页数：8

共 11 条

[1]

Cripps S. C., 2006, ARTECH MICR

[2] An Extended Topology of Parallel-Circuit Class-E Power Amplifier to Account for Larger Output Capacitances [J].

Cumana, Jesus ;

Grebennikov, Andrei ;

Sun, Guolin ;

Kumar, Narendra ;

Jansen, Rolf H. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (12) :3174-3183

[3]

Grebennikov A., 2007, SWITCHMODE RF POWER

[4]

Grebennikov AV, 2002, IEEE MTT S INT MICR, P1627, DOI 10.1109/MWSYM.2002.1012169

[5] Highly efficient LDMOS power amplifier based on class-E topology [J].

Lee, J ;

Kim, S ;

Nam, J ;

Kim, J ;

Kim, I ;

Kim, B .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2006, 48 (04) :789-791

[6] A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications [J].

Lee, Yong-Sub ;

Jeong, Yoon-Ha .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (08) :622-624

[7] An Extended Topology of Parallel-Circuit Class-E Power Amplifier Using Transmission-Line Compensation [J].

Leng, Yongqing ;

Zeng, Yun ;

Zhang, Lijun ;

Zhang, Guoliang ;

Peng, Yatao ;

Guan, Jin ;

Yan, Yuepeng .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (04) :1628-1638

[8] Switched-mode high-efficiency microwave power amplifiers in a free-space power-combiner array [J].

Mader, TB ;

Bryerton, EW ;

Markovic, M ;

Forman, M ;

Popovic, Z .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (10) :1391-1398

[9] Class-E, class-C, and class-F power amplifiers based upon a finite number of harmonics [J].

Raab, FH .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (08) :1462-1468

[10] CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS [J].

SOKAL, NO ;

SOKAL, AD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (03) :168-176

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