Nanosecond scale carrier dynamics of self-assembled InAs/AlAs quantum dots studied by time-resolved photoluminescence

被引:2
|
作者
Ma, Z
Pierz, K
Hübner, J
Rühle, WW
机构
[1] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
[2] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
[3] Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, Canada
[4] Univ Marburg, D-35032 Marburg, Germany
来源
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 28卷 / 03期
关键词
semiconductor structures; quantum dots; ultrafast nonlinear optical phenomena;
D O I
10.1016/j.physe.2005.02.009
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photo-excited carrier dynamics in the self-assembled InAs/AlAs quantum dot system are studied by time-resolved photoluminescence within the first two nanoseconds. Several unexpected energy shifts are observed, i.e., an initial redshift of ground state photoluminescence which is followed by a blueshift after similar to 1 ns, and a continuous blueshift of the first excited states emission. Moreover, steady-state photoluminescence shows a continuous redshift of the ground state peak with increasing excitation intensity. Our data support the idea that for the carrier dynamics in the InAs/AlAs quantum dot system the existence of AlAs X-states, tunneling and scattering play an important role in the lateral carrier transfer in such a dense quantum dot system. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:203 / 208
页数:6
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