Etching characteristics of LiNbO3 in reactive ion etching and inductively coupled plasma

被引：71

作者：

Ren, Z. ^{[1
]}

Heard, P. J. ^{[2
]}

Marshall, J. M. ^{[3
]}

Thomas, P. A. ^{[3
]}

Yu, S. ^{[1
]}

机构：

[1] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1UB, Avon, England

[2] Univ Bristol, Interface Anal Ctr, Bristol, Avon, England

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2838180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The etching characteristics of congruent LiNbO3 single crystals including doped LiNbO3 and proton-changed LiNbO3 have been studied in reactive ion etching (RIE) and inductively coupled plasma (ICP) etching tools, using different recipes of gas mixtures. The effects of parameters including working pressure, RIE power, and ICP power are investigated and analyzed by measurement of etching depth, selectivity, uniformity, etched surface state, and sidewall profile by means of focused ion beam etching, energy-dispersive x-ray analysis, secondary ion mass spectroscopy, scanning electron microscopy, and surface profilometry. The effects of a sample carrier wafer coating have also been investigated. Optimized processes with high etching rates, good mask selectivity, and a near-vertical profile have been achieved. Ridge waveguides on proton-exchanged LiNbO3 have been fabricated and optically measured. (c) 2008 American Institute of Physics.

引用

页数：8

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