Integration of Structures and Circuits for Dosimetry in a Single CMOS Chip

被引：0

作者：

Garcia-Inza, M. ^{[1
,2
]}

Carbonetto, S. ^{[1
]}

Salaya, G. ^{[1
]}

Martinez Vazquez, I. ^{[1
]}

Faigon, A. ^{[1
,2
]}

机构：

[1] Univ Buenos Aires, Fac Ingn, INTECIN, Device Phys Microelect Lab, Av Paseo Colon 850,C1063ACV, Buenos Aires, DF, Argentina

[2] Consejo Nacl Invest Cient & Tecn, Buenos Aires, DF, Argentina

来源：

2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2016年

关键词：

MOSFET Dosimeter; Radiation Effects; CMOS Sensors; Solid-State Detectors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design and fabrication in a standard CMOS process of a chip that gathers several structures and circuits for ionizing radiation dosimetry. It includes already tested performance thick gate oxide transistors of different areas and other experimental circuits such as a fully integrated differential dosimeter, floating gate structures, and various types of differential amplifiers. First experimental results are presented.

引用

页数：5

共 19 条

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