Pseudospin-Polarized Topological Line Defects in Dielectric Photonic Crystals

被引:71
作者
Chen, Menglin L. N. [1 ]
Jiang, Li Jun [1 ]
Lan, Zhihao [2 ]
Sha, Wei E. I. [2 ,3 ]
机构
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
[2] UCL, Dept Elect & Elect Engn, London WC1E 6BT, England
[3] Zhejiang Univ, Coll Informat Sci & Elect Engn, Key Lab Micronano Elect Devices & Smart Syst Zhej, Hangzhou 310027, Peoples R China
关键词
Edge states; finite-difference (FD) supercell approach; photonic crystals (PCs); topological line defect; EDGE STATES;
D O I
10.1109/TAP.2019.2934816
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electromagnetic (EM) topological insulators have been extensively explored due to the robust edge states they support. In this work, we propose a topological EM system based on a line defect in topologically nontrivial photonic crystals (PCs). With a finite-difference supercell approach, modal analysis of the PC structure is investigated in detail. The topological line-defect states are pseudospin polarized and their energy flow directions are determined by the corresponding pseudospin helicities. These states can be excited by using two spatially symmetric line-source arrays carrying orbital angular momenta. The feature of the unidirectional propagation is demonstrated and it is stable when disorders are introduced to the PC structure.
引用
收藏
页码:609 / 613
页数:5
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