Growth of high resistivity CdTe and (Cd,Zn)Te crystals

被引：78
作者：
Fiederle, M
Babentsov, V
Franc, J
Fauler, A
Konrath, JP
机构：
[1] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany
[2] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2003年 / 38卷 / 7-8期
关键词：
Bridgman technique; cadmium compounds; semiconducting II-VI materials;
D O I：
10.1002/crat.200310072
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of high resistivity CdTe and (Cd,Zn)Te is successfully performed with different kinds of doping. In the literature intentionally undoped as well as doped crystals are presented with resistivities up to 10(10) Omegacm. In this paper we review the growth of high resistivity CdTe and (Cd,Zn)Te. The mechanism of compensation is discussed regarding the different dopants and deep levels, which seem to be responsible for the high resistivity. A common compensation model explains the high resistivity by deep levels. The doping and the influence on the compensation mechanism is compared for several elements like tin, germanium and chlorine. The material properties and the crystal quality of undoped and doped CdTe as well as (Cd,Zn)Te are shown.
引用
收藏
页码：588 / 597
页数：10
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