Contactless Characterization of Manganese and Carbon Delta-Layers in Gallium Arsenide

被引：3
作者：
Komkov, O. S. [1 ]
Kudrin, A. V. [2 ]
机构：
[1] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia
[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2017年 / 51卷 / 11期
关键词：
FRANZ-KELDYSH OSCILLATIONS; MOLECULAR-BEAM EPITAXY; DOPED GAAS-LAYERS; PHOTOREFLECTANCE SPECTRA; ELECTRIC-FIELD; QUANTUM-WELLS; N-GAAS; SPECTROSCOPY; TRANSITIONS; EPILAYERS;
D O I：
10.1134/S1063782617110161
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Single manganese and carbon delta-layers in undoped GaAs are analyzed by photoreflectance spectroscopy. The strength of built-in electric fields, determined by this method, is shown to increase with increasing layer concentration of introduced impurities and well correlate with technological and Hall data. The use of phase-sensitive photoreflectance makes it possible to measure the surface field and the field induced by delta-doping separately. This fact allows one to determine without contact the fraction of electrically active Mn impurity and reveal the contribution of carbon delta-layers to the characteristics of GaAs-based heterostructures.
引用
收藏
页码：1420 / 1426
页数：7
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