Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

被引：95

作者：

Ball, D. R. ^{[1
]}

Hutson, J. M. ^{[2
]}

Javanainen, A. ^{[3
]}

Lauenstein, J. -M. ^{[4
]}

Galloway, K. F. ^{[1
]}

Johnson, R. A. ^{[1
]}

Alles, M. L. ^{[1
]}

Sternberg, A. L. ^{[1
]}

Sierawski, B. D. ^{[1
]}

Witulski, A. F. ^{[1
]}

Reed, R. A. ^{[1
]}

Schrimpf, R. D. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

[2] David Lipscomb Univ, Dept Elect & Comp Engn, Nashville, TN 37204 USA

[3] Univ Jyvaskyla, Dept Phys, FI-40014 Jyvaskyla, Finland

[4] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2020年 / 67卷 / 01期

基金：

美国国家航空航天局; 芬兰科学院;

关键词：

Degradation; diode; heavy ion; MOSFET; power; silicon carbide (SiC); single-event burnout (SEB); CHARGE COLLECTION;

D O I：

10.1109/TNS.2019.2955922

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.

引用

页码：22 / 28

页数：7

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