Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements

被引：19

作者：

Ciuk, Tymoteusz ^{[1
]}

Kozlowski, Andrzej ^{[1
]}

Michalowski, Pawel Piotr ^{[1
]}

Kaszub, Wawrzyniec ^{[1
]}

Kozubal, Michal ^{[1
,2
]}

Rekuc, Zbigniew ^{[1
]}

Podgorski, Jaroslaw ^{[1
]}

Stanczyk, Beata ^{[1
]}

Przyborowska, Krystyna ^{[1
]}

Jozwik, Iwona ^{[1
]}

Kowalik, Andrzej ^{[1
]}

Kaminski, Pawel ^{[1
]}

机构：

[1] Inst Elect Mat Technol, Wolczynska 133, PL-01919 Warsaw, Poland

[2] VIGO Syst SA, Poznanska 129-133, PL-05850 Warsaw, Poland

来源：

CARBON | 2018年 / 139卷

基金：

欧盟地平线“2020”;

关键词：

Graphene; Epitaxy; CVD; Hall effect; Sensor; Atomic layer deposition; Transport properties; CHEMICAL-VAPOR-DEPOSITION;

D O I：

10.1016/j.carbon.2018.07.049

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this report we demonstrate the results of charge carriers transport studies in graphene using a Hall effect sensor fabricated on quasi-free-standing monolayer graphene grown on a semi-insulating on-axis vanadium-compensated 6H-SiC(0001) substrate in an epitaxial Chemical Vapor Deposition process. The sensor is passivated with aluminum oxide through atomic layer deposition and offers current-mode sensitivity of 140 V/AT with thermal stability of - 0.02%/K within the range between 80 and 573 K. The electrical properties of the graphene layer are determined as a function of temperature ranging from 300 to 770 K. High-temperature characteristics of passivated and not passivated graphene are compared and their profiles explained through a double carrier transport involving the spontaneous-polarizationinduced holes in the graphene layer and the thermally activated electrons from a shallow donor level of nitrogen in the quasi-cubic (k(1)) site and a deep acceptor level of vanadium in the hexagonal (h) site both present in the bulk of the vanadium-compensated SiC substrate. Finally, we conclude that this mechanism is directly responsible for the limitation of the thermal stability of the sensor's current-mode sensitivity. (C) 2018 Elsevier Ltd. All rights reserved.

引用

页码：776 / 781

页数：6

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