Interfacial electrostatic phenomena and capacitance-voltage characteristics of ultrathin polyimide Langmuir-Blodgett films

被引：0
|
作者：
Itoh, E [1 ]
Iwamoto, M [1 ]
机构：
[1] Tokyo Inst Technol, Tokyo 152, Japan
来源：
ELECTRICAL ENGINEERING IN JAPAN | 2001年 / 134卷 / 03期
关键词：
interface; electrostatic phenomena; polyimide; electronic state; ultrathin film; capacitance-voltage characteristic;
D O I：
10.1002/1520-6416(200102)134:3<9::AID-EEJ2>3.0.CO;2-D
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Capacitance-voltage (C-V) characteristic of ultrathin polyimide (PI) Langmuir-Blodgett (LB) films is discussed theoretically and experimentally taking into account the interfacial electrostatic phenomena and interfacial electronic states at the metal/PI LB film interface. It was found that the apparent film thickness decreases due to the charge exchange phenomena at the metal/film interface. It was also found that electrical insulating properties of the Au/PI LB film/Al device depended on the polarity of external voltage, probably due to the formation of the electrostatic interfacial electric field of 10(8) to 10(9) V/m. (C) 2000 Scripta Technica, Electr Eng Jpn 134(3): 9-15, 2001.
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页码：9 / 15
页数：7
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