Quantification of Ge and B in SiGe using secondary ion mass spectrometry

被引：6

作者：

Ehrke, HU ^{[1
]}

Maul, H ^{[1
]}

机构：

[1] FEI Co, D-85764 Oberschleissheim, Germany

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2005年 / 8卷 / 1-3期

关键词：

SiGe analysis; SIMS; depth profiling; production monitoring; normal-incidence oxygen sputtering; OCE (optical conductivity enhancement); boron; carbon; arsenic; germanium distribution;

D O I：

10.1016/j.mssp.2004.09.059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on routine secondary ion mass spectrometry (SIMS) applications in SiGe EPI process control. Subjects, among others, are quantitative Ge and B co-dopant depth profiles because of their importance for device performance. SIMS depth profiling with oxygen primary ions at normal incidence gives superior depth resolution, whereas Cs sputtering allows arsenic and oxygen monitoring. An intrinsic method to compensate erosion rate variations with Ge-content is proposed. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：111 / 114

页数：4

共 7 条

[1]

DOWSETT M, 2003, P SIMS 13 APPL SURF, V500, P203

[2]

EHRKE HU, IN PRESS P SIMS

[3] Oxygen beam SIMS depth profiling of Si1-xGex layers:: transient processes [J].