Influence of germanium doping on the mechanical strength of Czochralski silicon wafers

被引：26

作者：

Chen, Jiahe ^{[1
,2
]}

Yang, Deren ^{[1
,2
]}

Ma, Xiangyang ^{[1
,2
]}

Zeng, Zhidan ^{[1
,2
]}

Tian, Daxi ^{[1
,2
]}

Li, Liben ^{[1
,2
]}

Que, Duanlin ^{[1
,2
]}

Gong, Longfei ^{[3
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

[3] QL Elect Corp Ltd, Ctr Res & Dev, Ningbo 315800, Zhejiang, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2943272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanical strength in germanium-doped Czochralski silicon (GCz-Si) wafers has been investigated through the on-line warpage statistics analysis, indentation tests, and fracture structure measurements. It was found that the wafer warpage during manufacturing processes could be statistically suppressed by the germanium doping slightly. The enhancement effect of germanium doping on the mechanical strength in GCz-Si wafers could be shown obviously when the germanium concentration was higher than 10(18) cm(-3). Meanwhile, the fracture strength for both the as-grown and the postannealed GCz-Si wafers might be greater compared to that of the conventional Czochralski (Cz-Si) wafers. Moreover, the generation and mobilization of the dislocations induced by indentation in Cz-Si wafers could be suppressed by the germanium doping. These phenomena are interpreted through a dislocation pinning-up effect associated with the smaller-sized higher-density oxygen precipitates formed in GCz-Si wafers. (c) 2008 American Institute of Physics.

引用

页数：6

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