Accurate determination of absolute temperatures of GaAs based high-power diode lasers

被引：2

作者：

Ziegler, M. ^{[1
]}

Tomm, J. W. ^{[1
]}

Welk, F. ^{[1
]}

Elsaesser, T. ^{[1
]}

Monte, C. ^{[2
]}

Hollandt, J. ^{[2
]}

Kissel, H. ^{[3
]}

Seibold, G. ^{[3
]}

Biesenbach, J. ^{[3
]}

机构：

[1] Max Born Inst, Max Born Str 2A, D-12489 Berlin, Germany

[2] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

[3] DILAS Diodenlaser GmbH, D-55129 Mainz, Germany

来源：

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VI | 2008年 / 6876卷

关键词：

high-power diode lasers; temperature analysis; thermal imaging; thermography;

D O I：

10.1117/12.758879

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Thermal imaging is demonstrated as an attractive alternative for standard temperature measurements in diode lasers. It allows for the determination of time resolved temperature distributions in arbitrary materials of laser devices. Because of the partial mid-infrared transparency of the semiconductor materials involved, several issues complicate the thermal imaging approach. We analyze these detrimental effects for the case of GaAs based high-power diode lasers and demonstrate how to circumvent them. This leads to a deeper insight into the composite thermal emission signal from diode lasers and eventually to an accurate determination of absolute temperatures of semiconductor diode lasers.

引用

页数：8

共 13 条

[1]

ADACHI S, 1994, GAAS RELATED MAT

[2] Goals and status of the German national research initiative BRIOLAS (brilliant diode lasers) [J].

Bachmann, Friedrich .

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS V, 2007, 6456

[3] Highly reliable and efficient laser bars and cost efficient packaging [J].

Behringer, M ;

Tautz, S ;

Pammer, W ;

Friepes, K ;

Steegmueller, U ;

Philippens, M ;

Maric, J ;

Koenig, H ;

Luft, J ;

Herrmann, G ;

Schmitt, A .

High-Power Diode Laser Technology and Applications III, 2005, 5711 :12-20

[4] Analysis of thermal images from diode lasers: Temperature profiling and reliability screening [J].

Kozlowska, A ;

Latoszek, M ;

Tomm, JW ;

Weik, F ;

Elsaesser, T ;

Zbroszczyk, M ;

Bugajski, M ;

Spellenberg, B ;

Bassler, M .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

[5] Deep level emission from high-power diode laser bars detected by multispectral infrared imaging [J].

Kozlowska, A ;

Wawrzyniak, P ;

Tomm, JW ;

Weik, F ;

Elsaesser, T .

APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3

[6] Infrared imaging of semiconductor lasers [J].

Kozlowska, Anna .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (08) :R27-R40

[7] Near 1 kW of continuous-wave power from a single high-efficiency diode-laser bar [J].

Li, Hanxuan ;

Towe, Terry ;

Chyr, Irving ;

Brown, Denny ;

Nguyen, Touyen ;

Reinhardt, Frank ;

Jin, Xu ;

Srinivasan, Raman ;

Berube, Myra ;

Truchan, Tom ;

Bullock, Robert ;

Harrison, James .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (13-16) :960-962

[8] DETERMINATION OF THE DIRECTIONAL SPECTRAL EMISSIVITY OF SOLIDS IN THE SPECTRAL RANGE FROM 2.5-MU-M TO 45-MU-M AT TEMPERATURES BETWEEN 80-DEGREES-C AND 350-DEGREES-C [J].

LOHRENGEL, J ;

TODTENHAUPT, R ;

RAGAB, M .

WARME UND STOFFUBERTRAGUNG-THERMO AND FLUID DYNAMICS, 1993, 28 (06) :321-327

[9] High-brightness highly-reliable InGaAlAs/GaAs laser bars with reduced fill factor and 60% efficiency [J].

Schmitt, A ;

Behringer, M ;

Herrmann, G ;

Philippens, M ;

Heerlein, J ;

Luft, J .

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS, 2003, 4973 :1-9

[10]

Siegel R., 2002, THERMAL RAD HEAT TRA

← 1 2 →