Reduction of photoresist usage during spin coating

被引:7
作者
Chou, FC [1 ]
Wang, MW [1 ]
Gong, SC [1 ]
Yang, ZG [1 ]
机构
[1] Natl Cent Univ, Dept Mech Engn, Chungli 320, Taiwan
关键词
usage reduction; photoresist; spin coating; injection rate; injection volume;
D O I
10.1007/s11664-001-0055-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To reduce the photoresist usage and understand the film spreading process, this study performs flow visualization experiments and numerical simulations. This paper is the first work to show that in the early stage of the spin coating process, the spreading of photoresist is mainly governed by the photoresist injection. Then, instability fingers are formed due to the centrifugal force. Accompanied by the growing of fingers in length, the Coriolis force broadens the width of the fingers. The numerical results agree with the measured liquid front history at very short times. The difference between the numerical results and experiment data gradually arises due to the formation of instability fingers. The critical injection rate for fully coating a wafer increases with decreasing injection volume. Under a fixed wafer rotating speed, increasing the injection rate can significantly reduce the photoresist usage. To assist in the design and operation of the spin coating process, a regime map for injection rate and injection volume is provided.
引用
收藏
页码:432 / 438
页数:7
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