Process and Temperature Compensation for RF Low-Noise Amplifiers and Mixers

被引：40

作者：

Gomez, Didac ^{[1
]}

Sroka, Milosz ^{[2
]}

Gonzalez Jimenez, Jose Luis ^{[1
]}

机构：

[1] Univ Politecn Cataluna, Dept Elect Engn, ES-08034 Barcelona, Spain

[2] Toshiba Co Ltd, Digital Media SoC Dept, Ctr Semicond Res & Dev, Kawasaki, Kanagawa 2128520, Japan

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2010年 / 57卷 / 06期

关键词：

Low-noise amplifier (LNA); mixer; process compensation; RF integrated circuits; temperature compensation; FRONT-END; DESIGN;

D O I：

10.1109/TCSI.2009.2031707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature range. This paper proposes a new technique consisting of a compensation circuit that adapts and generates the appropriate bias voltage for LNAs and mixers so that the variability with temperature and process corners of their main performance metrics (S-parameters, gain, noise figure, etc.) is minimized.

引用

页码：1204 / 1211

页数：8

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