Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity

In this article, a 4H-SiC metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet (UV) photodetector (PD) with a normal working temperature up to 550 degrees C, has been successfully fabricated and characterized for the first time. At 550 degrees C, the dark current of our fabricated MISIM remains at similar to 0.2 nA level and a record photo-to-dark current ratio (PDCR) of 62.7 is achieved at a reverse bias voltage of -15 V. Under 275 nm illumination, high responsivity (R) of 0.23 and 0.54 A/W have been achieved at room temperature (RT) and 550 degrees C, respectively. To the best of our knowledge, this is the best result reported for high-temperature UV detectors based on the 4H-SiC. This work is significant for developing high-temperature 4H-SiC-based UV PDs.