Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures

被引：15

作者：

Choi, Kyeong-Keun ^{[1
]}

Kee, Jong ^{[1
]}

Park, Chan-Gyung ^{[1
]}

Kim, Deok-kee ^{[2
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, NINT, Pohang 790784, Gyeongbuk, South Korea

[2] Sejong Univ, Dept Elect Engn, Seoul 143747, South Korea

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

SILICON;

D O I：

10.7567/APEX.8.045801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We evaluated the effects of H-2 plasma and thermal treatment on current-voltage (I-V) and capacitance-voltage ( C-V) characteristics using Al/Al2O3/Si. H-2 plasma treatment reduced the concentration of C and enhanced the diffusion of Si and O atoms and the mean breakdown field strength. The breakdown field increased significantly after rapid thermal annealing (RTA) due to crystallization and the formation of an interface layer between Si and Al2O3, which was confirmed by TEM, secondary ion mass spectroscopy (SIMS), and three-dimensional (3D) atom probe tomography. H-2 plasma treatment produced a negative fixed charge due to the outgassing of C and H-2, and RTA produced a positive fixed charge. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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