Transport properties of low-dimensional semiconductor structures in the presence of spin-orbit interaction

被引：17

作者：

Krstajic, P. M. ^{[1
]}

Pagano, M. ^{[1
]}

Vasilopoulos, P. ^{[1
]}

机构：

[1] Concordia Univ, Dept Phys, Montreal, PQ H4B 1R6, Canada

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2011年 / 43卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

ONE-BODY;

D O I：

10.1016/j.physe.2010.11.008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transport properties of a two-dimensional electron gas (2DEG) and of quantum wires are theoretically studied in the presence of both Rashba and Dresselhaus terms of the spin-orbit interaction (SOI). Fully quantum mechanical expressions for the conductivity are evaluated for very low temperatures and the differences between them and previous semiclassical results are highlighted. Two kinds of confining potentials in quantum wires are considered, square-type and parabolic. Various cases depending on the relative strengths of two different SOI terms are discussed and the relaxation times for various impurity potentials are evaluated. In addition, the spin accumulation in a 2DEG and in a quantum wire (QW) is evaluated semiclassically and its dependence on the Fermi energy and the SOI strengths is discussed. A nearly saw-tooth dependence on the electron concentration is obtained for a QW with parabolic confinement (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：893 / 900

页数：8

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