Properties of Co on Cu(111) revealed by AES and DEPES

被引：4

作者：

Turko, D. ^{[1
]}

Morawski, I. ^{[1
]}

Nowicki, M. ^{[1
]}

机构：

[1] Univ Wroclaw, Inst Expt Phys, PL-50204 Wroclaw, Poland

来源：

VACUUM | 2011年 / 85卷 / 07期

关键词：

Electron scattering; Multiple scattering (MS) approximation; Inelastic mean free path (IMFP); Directional elastic peak electron spectroscopy (DEPES); Cobalt; Copper; Crystalline structure; DIRECTIONAL ELASTIC PEAK; AUGER-ELECTRON-SPECTROSCOPY; CRYSTALLINE-STRUCTURE; CO/CU SUPERLATTICES; THIN-FILMS; GROWTH; SURFACE; PHOTOELECTRON; DIFFRACTION; LAYERS;

D O I：

10.1016/j.vacuum.2010.11.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Auger electron (AES) and directional elastic peak electron (DEPES) spectroscopies were used to investigate the Co/Cu(111) interface. The change in the Auger Cu (M2.3VV transition at 66 eV) peak intensity (h(Cu)) recorded at room temperature shows that the Co growth mechanism is not a layer by layer type. This proves that Co does not wet the Cu substrate. The recorded DEPES profiles reveal the coexistence of fcc and hcp Co structures already at an early stage of growth (0.8 ML). The Co coverage increase leads to the reduction of intensities associated with the fcc structure and significant increase of the signal from the hcp structure. The comparison between experimental and theoretical data at large coverages (43 ML) shows a major contribution of the hcp structure within the Co layers in the recorded DEPES profiles. (c) 2010 Elsevier Ltd. All rights reserved.

引用

页码：768 / 771

页数：4

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