Electrical properties of Nb-doped BaTiO3

被引：37

作者：

Kowalski, K

Ijjaali, M

Bak, T

Dupre, B

Nowotny, J ^{[1
]}

Rekas, M

Sorrell, CC

机构：

[1] Univ New S Wales, Sch Mat Sci & Engn, Ctr Mat Res Energy, Sydney, NSW 2052, Australia

[2] Univ Nancy 1, Fac Sci, Lab Chim Solide Mineral, F-54506 Vandoeuvre Nancy, France

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2001年 / 62卷 / 03期

关键词：

oxides; defects; dielectric properties; diffusion; transport properties;

D O I：

10.1016/S0022-3697(00)00213-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper reports the results of the electrical conductivity measurements for Nb-doped BaTiO3 ceramics in the temperature range 1073-1373 K in both oxidizing and reducive atmospheres. The electrical conductivity was also applied to monitor the formation of Nb-doped BaTiO3. It is shown that the solid state reaction for the system BaTiO3-Nb2O3 takes place at 1573 K, but annealing at 1623 K is required to produce specimen of reproducible electrical properties. The solubility limit of Nb in stoichiometric BaTiO3 (Ba/Ti = 1) at 1573 K in air is 5 at%. The p(O-2) exponent of the electrical conductivity was determined (1/n(sigma) = -1/3.9). This exponent is consistent with the defect disorder model of Nb-doped BaTiO3 derived assuming that ionic charge compensation prevails. The activation energy of the electrical conductivity for Nb-doped BaTiO3 depends on both p(Oz) and Nb content. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：543 / 551

页数：9

共 32 条

[1] EFFECT OF SEGREGATION ON NEAR-SURFACE AND BULK TRANSPORT PHENOMENA IN IONIC-CRYSTALS [J].