Short-wavelength infrared HgCdTe photovoltaic detectors fabricated by boron implantation

Short wavelength (SWIR) devices have been fabricated using boron implantation. The capacitance-voltage measurement has been used to examine the junction doping profiles. The junction doping profile can be n/n(-)/p type or n/p type depending on the p-side doping concentration. Only the junctions made on the lightly doped substrates show the n/n(-)/p type abrupt junction, with the n(-) region in the low 1x10(14)cm(-3) range. On the heavily doped substrates, we obtain the n/p type graded junctions. The peak detectivity D*(lambda p) performance at room temperature of the large area (A(j) = 5.9mm(2)) detector was about 2.6x10(11) cm-Hz(1/2)/W at the zero bias. Higher D*(lambda p) performance about 1.4x10(12) cm-Hz(1/2)/W was obtained on smaller area detectors at 250K.