Preparation and properties of highly oriented LaNiO3 thin films on different substrates

被引：2
|
作者：
Yang, Xian [1 ]
Wu, Xiaoqing [1 ]
Ren, Wei [1 ]
Shi, Peng [1 ]
Yan, Xin [1 ]
Lei, Hongsheng [1 ]
Yao, Xi [1 ]
机构：
[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China
来源：
FERROELECTRICS | 2007年 / 357卷
关键词：
LaNiO3; pseudo-cubic perovskite structure; orientation growth; thin films;
D O I：
10.1080/00150190701527878
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly (100) and (110) oriented LaNiO3 (LNO) thin films were prepared on various substrates, including Si (100), Si (111), SiO2/Si, Si3N4/Si by a metal-organic decomposition (MOD) method. Two different thermal processes were employed to crystallize LNO films. XRD analysis showed different thermal processes led to different preferential orientations of LNO films. The orientation dependence of LNO films on annealing process has been investigated. FESEM and AFM images show LNO films are uniform and crack-free. Low resistivity and high infrared absorbability make LNO thin film a promising electrode and infrared absorbed material for IR detector applications.
引用
收藏
页码：53 / 57
页数：5
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