A 0.007 mm2 0.6 V 6 MS/s Low-Power Double Rail-to-Rail SAR ADC in 65-nm CMOS

被引:4
作者
Jo, Yong-Jun [1 ]
Kim, Ju Eon [1 ]
Baek, Kwang-Hyun [2 ]
Kim, Tony Tae-Hyoung [1 ]
机构
[1] Nanyang Technol Univ, Ctr Integrated Circuits & Syst, Singapore, Singapore
[2] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea
关键词
Double rail-to-rail; low-power; SAR ADC; compute-in-memory; power-efficient;
D O I
10.1109/TCSII.2021.3097126
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 0.007mm(2) 0.6V 6MS/s 10b double rail-to-rail input range SAR ADC is implemented in 65-nm technology. The extended input range broadens the applications of the low-power SAR ADCs such as compute-in-memory. The proposed ADC occupies less area since it only needs additional two series-connected capacitors and a differential-difference comparator for double rail-to-rail operation. The set-and-down operation reduces the input-referred noise of the comparator by over ten times than complementary switching. The novel metal-insulator-metal and metal-oxide-metal capacitor hybrid cap-DAC architecture minimize the gain error of ADC. The prototype achieves SNR of 53.90-dB, SNDR of 52.12-dB, and SFDR of 60.39-dB, power of 12.98-mu W, and FoM of 6.6-fJ/conv.-step.
引用
收藏
页码:3088 / 3092
页数:5
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