Upconversion luminescence and optical power limiting effect based on two- and three-photon absorption processes of ZnO crystal

被引:14
作者
Wang, Xinshun
Qiu, Jianrong [1 ]
Song, Juan
Xu, Jian
Liao, Yang
Sun, Haiyi
Cheng, Ya
Xu, Zhizhan
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
基金
中国国家自然科学基金;
关键词
upconversion; optical power limiting; two-photon absorption; three-photon absorption; femtosecond laser; exciton; defect;
D O I
10.1016/j.optcom.2007.08.021
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Near-infrared to UV and visible upconversion luminescence was observed in single-crystalline ZnO under an 800 nm infrared femtosecond laser irradiation. The optical properties of the crystal reveal that the UV and VIS emission band are due to the exciton transition (D0X) bound to neutral donors and the deep luminescent centers in ZnO, respectively. The relationship between the upconversion luminescence intensity and the pump power of the femtosecond laser reveals that the UV emission belongs to three-photon sequential band-to-band excitation and the VIS emission belongs to two-photon simultaneous defect-absorption induced luminescence. A saturation phenomenon and polarization-dependent effect are also observed in the upconversion process of ZnO. A very good optical power limiting performance at 800 nm has been demonstrated. The two- and three-photon absorption coefficients of ZnO crystal were measured to be 0.2018 cm GW(-1) and 7.102 x 10(-3) cm(3) GW(-2), respectively. The two- and three-photon cross sections were calculated to be 1.189 x 10(-51) cm(4) s and 1.040 x 10(-80) cm(6) s(2), respectively. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:197 / 201
页数:5
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