Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method

被引：0

作者：

Ramsay, E. ^{[1
]}

Serrels, K. A. ^{[1
]}

Thomson, M. J. ^{[1
]}

Waddle, A. J. ^{[1
]}

Warburton, R. J. ^{[1
]}

Taghizadeh, M. R. ^{[1
]}

Reid, D. T. ^{[1
]}

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

ISTFA 2007 | 2007年

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By implementing two-photon optical-beam-induced-current microscopy using a solid-immersion lens, imaging inside a silicon flip chip is reported with 166nm lateral resolution and an axial resolution capable of resolving features only 100nm in height.

引用

页码：77 / 80

页数：4

共 5 条

[1] Born M, 2005, Principles of optics
[2] High spatial resolution subsurface microscopy
Ippolito, SB
Goldberg, BB
Unlü, MS
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (26) : 4071 - 4073
[3] Two-photon optical-beam-induced current solid-immersion imaging of a silicon flip chip with a resolution of 325 nm
Ramsay, E
Pleynet, N
Xiao, D
Warburton, RJ
Reid, DT
[J]. OPTICS LETTERS, 2005, 30 (01) : 26 - 28
[4] Three-dimensional imaging of a silicon flip chip using the two-photon optical-beam induced current effect
Ramsay, E
Reid, DT
Wilsher, K
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (01) : 7 - 9
[5] Two-photon optical beam induced current imaging through the backside of integrated circuits
Xu, C
Denk, W
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (18) : 2578 - 2580

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