Experimental Verification of the Impact of Analog CMS on CIS Readout Noise

被引：16
作者：
Capoccia, Raffaele [1 ]
Boukhayma, Assim [1 ]
Enz, Christian [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Integrated Circuits Lab ICLAB, CH-1015 Lausanne, Switzerland
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2020年 / 67卷 / 03期
关键词：
CMOS image sensors; correlated multiple sampling; low light application; low noise design; pixel design; CMOS IMAGE SENSOR; REDUCTION TECHNIQUES; PINNED PHOTODIODE; ON-CHIP; CIRCUIT; GAIN; CCD;
D O I：
10.1109/TCSI.2019.2951663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, the impact of the combination of the column-level gain and the correlated multiple sampling (CMS) on the noise of CMOS image sensor (CIS) readout chains is first analyzed. The theory is then validated experimentally with CIS readout chains embedding two different pixels, a variable gain column-level amplifier (CLA) and a passive switched-capacitor (SC) CMS circuit. The noise measurements include photon transfer curves (PTCs) for different gains and pixels and they show reasonably well that CMS reduces the 1/f noise by about 33% for order 8 as expected theoretically.
引用
收藏
页码：774 / 784
页数：11
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