High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

被引：25
|
作者：
Song, JO [1 ]
Leem, DS
Kwak, JS
Nam, OH
Park, Y
Seong, TY
机构：
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 12期
关键词：
D O I：
10.1063/1.1613991
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a promising Rh-based scheme for high-quality ohmic contacts to surface-treated p-GaN:Mg (4x10(17) cm(-3)). It is shown that the two-step surface-treated Rh contacts (10 nm) produce a specific contact resistance of 1.7x10(-5) Omega cm(2). It is also shown that the two-step treated Rh/Ni (5/5 nm) and Rh/Au (5/5 nm) contacts yield 6.0x10(-5) and 9.3x10(-6) Omega cm(2), respectively. Based on the current-voltage measurement, x-ray photoemission spectroscopy, and Auger electron spectroscopy results, the mechanisms for the formation of the nonalloyed Rh-based ohmic contacts is described and discussed. (C) 2003 American Institute of Physics.
引用
收藏
页码：2372 / 2374
页数：3
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