Gate-tunable Thermoelectric Effects in a Graphene/WS2 van der Waals Heterostructure

被引：6

作者：

Lee, Junho ^{[1
]}

Son, Minsol ^{[1
]}

Jeong, Hyebin ^{[1
]}

Sim, Injip ^{[1
]}

Myoung, Nojoon ^{[1
]}

机构：

[1] Chosun Univ, Dept Phys Educ, Gwangju 61452, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2018年 / 73卷 / 07期

关键词：

Graphene; van der Waals Heterostructures; Thermoelectric effects; Seebeck coefficient; Tunnel junction; TRANSPORT; EMISSION; GAS; BN;

D O I：

10.3938/jkps.73.940

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermoelectric effects of Dirac fermions through a van der Waals (vdW) heterostructure consisting of graphene and tungsten diselenide (WS2) are theoretically investigated. When the lattice temperature of the top graphene layer differs from that of the bottom graphene layer, thermally excited Dirac fermions can be transferred through the WS2 layer, generating tunnel current. This thermoelectric tunnel current shows drastic changes in its characteristics as a consequence of gatevoltage tuning. The thermoelectric power of the proposed graphene-WS2 vdW heterostructure is characterized by examining the Seebeck coefficient.

引用

页码：940 / 944

页数：5

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