共 24 条
Ultralow thermal conductivity in n-type Ge-doped AgBiSe2 thermoelectric materials
被引:46
作者:
Wu, Hsin-Jay
[1
]
Wei, Pai-Chun
[2
]
Cheng, Hao-Yen
[1
]
Deng, Jie-Ru
[1
]
Chen, Yang-Yuan
[2
]
机构:
[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
来源:
关键词:
Thermoelectric material;
n-type AgBiSe2;
Isothermal section;
Bi2Se3;
nano-precipitate;
D O I:
10.1016/j.actamat.2017.09.029
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The n-type I-V-VI2 AgBiSe2 features intrinsically low K due to the anharmonicity of chemical bonds. Experimentally-determined isothermal section guides the starting compositions for the following AgBiSe2-based alloys. Among the undoped alloys, the Ag25Bi25Se50 exhibits a highest peak of zT similar to 0.75, and yet the neighboring Ag20Bi27.5Se52.5, which involves a Se-rich liquid phase, has a much lower zT similar to 0.3 at 748 K, respectively. With the incorporation of Ge, the (GeSe)(0.03)(AgBiSe2)0.97 exhibits an ultralow K similar to 0.3 (W/mK), owing to the formation of Bi2Se3 nano-precipitate in the size of 20-40 nm. Additionally, the moire fringes with a periodicity of 0.25 nm are observed in the Bi2Se3 nano-precipitate, implying the presence of local mass fluctuation and superlattice, which could further lead to enhancing phonon scattering and reduced K. As a result, the ultra-low K similar to 0.3 (W/mK) boosts the peak of zT up to zT similar to 1.05 in n-type (GeSe)(0.03)(AgBiSe2)(0.97), which shows a 140% enhancement compared with that of the undoped AgBiSe2. (c) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页码:217 / 229
页数:13
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