Ultralow thermal conductivity in n-type Ge-doped AgBiSe2 thermoelectric materials

被引:46
作者
Wu, Hsin-Jay [1 ]
Wei, Pai-Chun [2 ]
Cheng, Hao-Yen [1 ]
Deng, Jie-Ru [1 ]
Chen, Yang-Yuan [2 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
关键词
Thermoelectric material; n-type AgBiSe2; Isothermal section; Bi2Se3; nano-precipitate;
D O I
10.1016/j.actamat.2017.09.029
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The n-type I-V-VI2 AgBiSe2 features intrinsically low K due to the anharmonicity of chemical bonds. Experimentally-determined isothermal section guides the starting compositions for the following AgBiSe2-based alloys. Among the undoped alloys, the Ag25Bi25Se50 exhibits a highest peak of zT similar to 0.75, and yet the neighboring Ag20Bi27.5Se52.5, which involves a Se-rich liquid phase, has a much lower zT similar to 0.3 at 748 K, respectively. With the incorporation of Ge, the (GeSe)(0.03)(AgBiSe2)0.97 exhibits an ultralow K similar to 0.3 (W/mK), owing to the formation of Bi2Se3 nano-precipitate in the size of 20-40 nm. Additionally, the moire fringes with a periodicity of 0.25 nm are observed in the Bi2Se3 nano-precipitate, implying the presence of local mass fluctuation and superlattice, which could further lead to enhancing phonon scattering and reduced K. As a result, the ultra-low K similar to 0.3 (W/mK) boosts the peak of zT up to zT similar to 1.05 in n-type (GeSe)(0.03)(AgBiSe2)(0.97), which shows a 140% enhancement compared with that of the undoped AgBiSe2. (c) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:217 / 229
页数:13
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