Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition

被引:32
作者
Bergmann, RB
Zaczek, C
Jansen, N
Oelting, S
Werner, JH
机构
[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany
[2] ANTEC GMBH, D-65779 Kelkheim, Germany
关键词
D O I
10.1063/1.121519
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 mu m/min at deposition temperatures in the range of 500-650 degrees C. Hall-effect measurements show a majority carrier mobility of 200 cm(2)/V s at a hole concentration of 1.4x10(17) cm(-3) in our films. A minority carrier diffusion length of 4.5 mu m is determined from quantum efficiency measurements in the epitaxially grown Si films. (C) 1998 American Institute of Physics.
引用
收藏
页码:2996 / 2998
页数:3
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