Theory of Li in ZnO:: A limitation for Li-based p-type doping -: art. no. 155205

被引:319
|
作者
Wardle, MG [1 ]
Goss, JP [1 ]
Briddon, PR [1 ]
机构
[1] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevB.71.155205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
p-type doping of ZnO has thus-far proved difficult. Some reports indicate that Li substituting for Zn would be a shallow acceptor, with work on ferroelectric material showing that Li can be incorporated at the atomic percent concentrations. However, Li doping typically increases the resistivity of otherwise n-type material. We report on the structure and properties of Li in ZnO as predicted by first principles calculations. We also study the diffusion of interstitial Li and show that doping may be limited by the formation of Li2O inclusions and the formation of strongly bound passive Li - H complexes.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] Origin of p-type doping difficulty in ZnO:: The impurity perspective -: art. no. 073202
    Park, CH
    Zhang, SB
    Wei, SH
    PHYSICAL REVIEW B, 2002, 66 (07)
  • [2] Critical conditions for the formation of p-type ZnO with Li doping
    Jin, Mingge
    Li, Zhibing
    Huang, Feng
    Xia, Yu
    Ji, Xu
    Wang, Weiliang
    RSC ADVANCES, 2018, 8 (54): : 30868 - 30874
  • [3] Possible p-type doping with group-I elements in ZnO -: art. no. 115210
    Lee, EC
    Chang, KJ
    PHYSICAL REVIEW B, 2004, 70 (11) : 115210 - 1
  • [4] Tuning doping site and type by strain: Enhanced p-type doping in Li doped ZnO
    Zhu, Junyi
    Wei, Su-Huai
    SOLID STATE COMMUNICATIONS, 2011, 151 (20) : 1437 - 1439
  • [5] Pulsed-laser-deposited p-type ZnO films with phosphorus doping -: art. no. 043519
    Vaithianathan, V
    Lee, BT
    Kim, SS
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
  • [6] Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO -: art. no. 075205
    Zhang, SB
    Wei, SH
    Zunger, A
    PHYSICAL REVIEW B, 2001, 63 (07)
  • [7] Characterization of the p-type ZnO solid solution by doping Li under high pressure
    Qin Jie-Ming
    Tian Li-Fei
    Jiang Da-Yong
    Gao Shang
    Zhao Jian-Xun
    Liang Jian-Cheng
    ACTA PHYSICA SINICA, 2012, 61 (07)
  • [8] Cluster-doping approach for wide-gap semiconductors:: The case of p-type ZnO -: art. no. 256401
    Wang, LG
    Zunger, A
    PHYSICAL REVIEW LETTERS, 2003, 90 (25)
  • [9] p-Type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy -: art. no. 052106
    Xiu, FX
    Yang, Z
    Mandalapu, LJ
    Liu, JL
    Beyermann, WP
    APPLIED PHYSICS LETTERS, 2006, 88 (05) : 1 - 3
  • [10] P-type doping and devices based on ZnO
    Look, DC
    Claftin, B
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03): : 624 - 630