Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

被引：3

作者：

Novikov, A. V. ^{[1
,2
]}

Yurasov, D. V. ^{[1
]}

Morozova, E. E. ^{[1
]}

Skorohodov, E. V. ^{[1
]}

Verbus, V. A. ^{[1
,3
]}

Yablonskiy, A. N. ^{[1
]}

Baidakova, N. A. ^{[1
]}

Gusev, N. S. ^{[1
]}

Kudryavtsev, K. E. ^{[1
,2
]}

Nezhdanov, A. V. ^{[2
]}

Mashin, A. I. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Afonino 603087, Nizhny Novgorod, Russia

[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

[3] Natl Res Univ, Higher Sch Econ, Nizhnii Novgorod 603155, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

MOLECULAR-BEAM EPITAXY; SI;

D O I：

10.1134/S1063782618110167

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The formation and properties of locally tensile strained Ge microstructures (microbridges) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the fabricated microstructure has to be minimized. Measurements of the local strain using Raman scattering show significant enhancement of the tensile strain from 0.2-0.25% in the initial Ge film to 2.4% in the Ge microbridges. A considerable increase in the luminescence intensity and significant modification of its spectrum in the regions of maximum tensile strain in Ge microbridges and in their vicinity as compared to weakly strained regions of the initial Ge film is demonstrated by microphotoluminescence spectroscopy.

引用

页码：1442 / 1447

页数：6

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