Graphene-mediated band gap engineering of WO3 nanoparticle and a relook at Tauc equation for band gap evaluation

被引：89
作者：
Baishya, Kaushik [1 ]
Ray, Joydwip S. [1 ]
Dutta, Pankaj [2 ]
Das, Partha P. [3 ]
Das, Shyamal K. [1 ]
机构：
[1] Tezpur Univ, Dept Phys, Tezpur 784028, Assam, India
[2] Dibrugarh Univ, Dept Phys, Dibrugarh 786004, Assam, India
[3] Natl Inst Technol Karnataka, Dept Phys, Surathkal 575025, India
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2018年 / 124卷 / 10期
关键词：
PHOTOCATALYTIC DEGRADATION; TUNGSTEN-OXIDE; NANOCOMPOSITES; TIO2; COMPOSITES; PHASE; FILMS;
D O I：
10.1007/s00339-018-2097-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Engineering the band gap of semiconductors is often crucial in the quest for developing new and advanced technologies. In this report, the implication of graphene on the band gap optimization of tungsten trioxide (WO3) is discussed. Simple one-step sol-gel process was followed to anchor WO3 nanoparticles in graphene. Graphene induces a redshift in the band gap of WO3. Band gap narrowing of 6.60% is observed for 7wt% graphene-tethered WO3. Interestingly, a profound difference is observed in estimating the band gap energy values followingthe usual Tauc equation. Our observation suggests that the differential form of Tauc equation is better suited to determine the band gap energy of inorganic semiconductors than the typical extrapolationmethod.
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页数：6
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