NbReN: A disordered superconductor in thin film form for potential application as superconducting nanowire single photon detector

被引:14
作者
Cirillo, C. [1 ]
Granata, V [2 ]
Spuri, A. [3 ]
Di Bernardo, A. [3 ]
Attanasio, C. [2 ]
机构
[1] Univ Salerno, CNR SPIN, I-84084 Fisciano, Sa, Italy
[2] Univ Salerno, Dipartimento Fis ER Caianiello, I-84084 Fisciano, Sa, Italy
[3] Univ Konstanz, Fachbereich Phys, Univ Str 10, D-78457 Constance, Germany
基金
欧盟地平线“2020”;
关键词
FLUX-FLOW; SIZE DEPENDENCE; TRANSITION; TEMPERATURE; FLUCTUATION; DIMENSIONALITY; RESISTIVITY; PERFORMANCE; WAVELENGTH; RESISTANCE;
D O I
10.1103/PhysRevMaterials.5.085004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A superconductor, NbReN, in thin film form is synthesized. Here, the deposition parameters and the electrical transport characterization of NbReN films grown by reactive dc sputtering using a NbRe target are reported. The deposition conditions are systematically varied to optimize the superconducting and electrical properties of the resulting samples. Films with polycrystalline structure and well established superconducting ordering are obtained. The results of the electrical transport properties are studied and interpreted in the framework of different theoretical models. From the analysis of the estimated microscopical parameters considerations about research perspectives as well as possible future applications of the material are discussed. In particular, the potential of NbReN thin films for the realization of SNSPDs with improved performances compared to the existing ones is evaluated.
引用
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页数:13
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