Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm

被引：102

作者：

Comandar, L. C. ^{[1
,2
]}

Froehlich, B. ^{[1
]}

Dynes, J. F. ^{[1
]}

Sharpe, A. W. ^{[1
]}

Lucamarini, M. ^{[1
]}

Yuan, Z. L. ^{[1
]}

Penty, R. V. ^{[2
]}

Shields, A. J. ^{[1
]}

机构：

[1] Toshiba Res Europe Ltd, Cambridge CB4 0GZ, England

[2] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

AVALANCHE PHOTODIODES; PERFORMANCE; MODE;

D O I：

10.1063/1.4913527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with an increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns. (C) 2015 AIP Publishing LLC.

引用

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