AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With -12.8-dB Minimum Insertion Loss

被引：30

作者：

Kaletta, Udo Christian ^{[1
]}

Wipf, Christian ^{[1
]}

Fraschke, Mirko ^{[1
]}

Wolansky, Dirk ^{[1
]}

Schubert, Markus Andreas ^{[1
]}

Schroeder, Thomas ^{[1
,2
]}

Wenger, Christian ^{[1
]}

机构：

[1] Leibniz Inst Innovat Microelect, D-15236 Frankfurt, Germany

[2] Brandenburg Univ Technol Cottbus Senftenberg, D-03042 Cottbus, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 03期

关键词：

Aluminum nitride (AlN); CMOS; finite-element method (FEM); insertion loss (IL); Si(100); surface acoustic wave (SAW); SAW DEVICES; ALN; RESONATORS; LAYERS;

D O I：

10.1109/TED.2015.2395443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices. The filter insertion loss could be improved to -12.8 dB. The device exhibits high crosstalk suppression of -50 dB on a standard Si-substrate (10 Omega cm). X-ray diffraction, (scanning) transmission electron microscopy, and energy dispersive X-ray spectroscopy studies correlate the signal quality with c-axis orientation of aluminum nitride films on interdigitated transducer finger electrodes. Finite-element method simulations are in good agreement with the electric measurements and show typical Rayleigh particle displacement.

引用

页码：764 / 768

页数：5

共 25 条

[1] Surface acoustic wave velocity in single-crystal AIN substrates
Bu, G
Ciplys, D
Shur, M
Schowalter, LJ
Schujman, S
Gaska, R
[J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2006, 53 (01) : 251 - 254
[2] DETERMINATION OF PHYSICAL RESPONSE IN (Mo/AlN) SAW DEVICES
Caicedo, J. C.
Perez, J. A.
Caicedo, H. H.
Riascos, H.
[J]. SURFACE REVIEW AND LETTERS, 2013, 20 (02)
[3] SAW characteristics of AlN films sputtered on silicon substrates
Clement, M
Vergara, L
Sangrador, J
Iborra, E
Sanz-Hervás, A
[J]. ULTRASONICS, 2004, 42 (1-9) : 403 - 407
[4] Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films
Clement, M
Iborra, E
Sangrador, J
Sanz-Hervás, A
Vergara, L
Aguilar, M
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1495 - 1500
[5] SAW ring filters with insertion loss of 1 dB
Dobershtein, SA
Malyukhov, VA
[J]. IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1997, 44 (03) : 590 - 596
[6] Fu YQ, 2010, ACOUSTIC WAVES, P263
[7] High-frequency surface acoustic wave filter based on diamond thin film
Fujii, Satoshi
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (05): : 1072 - 1077
[8] ZnOA1N/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient
El Hakiki, M
Elmazria, O
Assouar, MB
Mortet, V
Le Brizoual, L
Vanecek, M
Alnot, P
[J]. DIAMOND AND RELATED MATERIALS, 2005, 14 (3-7) : 1175 - 1178
[9] Kaletta U., 2012, 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD 2012), P79, DOI 10.1109/ISCDG.2012.6359984
[10] Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100)
Kaletta, Udo Ch.
Wolansky, D.
Wipf, M. Fraschke Ch.
Wenger, Ch.
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, 2014, 11 (02): : 249 - 252

← 1 2 3 →