High-Performance Photovoltaic Effect with Electrically Balanced Charge Carriers in Black Phosphorus and WS2 Heterojunction

被引:31
作者
Kwak, Do-Hyun [1 ]
Ra, Hyun-Soo [1 ]
Jeong, Min-Hye [1 ]
Lee, A-Young [1 ]
Lee, Jong-Soo [1 ]
机构
[1] DGIST, Dept Energy Sci & Engn, Daegu 42988, South Korea
来源
ADVANCED MATERIALS INTERFACES | 2018年 / 5卷 / 18期
基金
新加坡国家研究基金会;
关键词
black phosphorus; charge carrier balance; heterojunction p-n diodes; photovoltaic effects; tungsten disulfide; FIELD-EFFECT TRANSISTORS; DER-WAALS HETEROSTRUCTURES; P-N HETEROJUNCTIONS; GATE-TUNABLE DIODE; JUNCTIONS; PASSIVATION; TRANSPORT; GRAPHENE;
D O I
10.1002/admi.201800671
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D van der Waals materials are promising for various electronic and optoelectronic devices because of their thickness-dependent mobility and tunable bandgap. Recently, heterojunction structures based on 2D van der Waals materials have exhibited their potential for photovoltaic applications as ultrathin p-n diodes. In this study, the photovoltaic effect of a multilayer black phosphorus (BP)/WS2 p-n heterojunction device is demonstrated under the 405 nm laser illumination and the AM 1.5 solar spectrum. The diode-like characteristics and photovoltaic effect rely on balance between charge carriers in the heterojunction device, by showing the highest performance at the balance position. The gate-tunable heterojunction device shows a high current rectification of 10(3) and an external quantum efficiency of 4.4% under the 405 nm laser illumination, and a photovoltaic efficiency of 4.6% under the AM 1.5 solar spectrum. This work suggests that the balancing of the charge carriers in the 2D heterojunction p-n diode is highly prioritized to fabricate high-performance photovoltaic device.
引用
收藏
页数:7
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