Experimental and theoretical studies of the Si(100)/SiO2 interface formed by wet and dry oxidation

被引：0

作者：

Chowdhuri, AR ^{[1
]}

Jin, DU ^{[1
]}

Takoudis, CG ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem Engn, Chicago, IL 60607 USA

来源：

CRYSTALLINE OXIDE-SILICON HETEROSTRUCTURES AND OXIDE OPTOELECTRONICS | 2003年 / 747卷

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Interfacial strain and substoichiometric silicon oxides are the two principal causes that result in the redshift of the transverse and longitudinal optical phonons of the asymmetric stretch of O in the Si-O-Si bridging bond of thermal SiO(2) with decreasing oxide thickness. Analyses to comprehend these effects, therefore, require consideration of both strain and interfacial substoichiometry. A method to isolate the contributions of strain and suboxide content towards the observed shifts is proposed. The procedure, which utilizes simple optical model and effective medium approximation, allows estimation of the average strain and suboxide concentration in films of different thickness. Analyses of oxides formed at two different temperatures (550 and 700degreesC) with dry and wet oxygen reveal how process conditions affect the interface properties.

引用

页码：329 / 334

页数：6

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