Stable response to visible light of InGaN photoelectrodes

被引：54
作者：
Luo, Wenjun [1 ,4 ]
Liu, Bin [2 ,3 ]
Li, Zhaosheng [1 ,4 ,5 ]
Xie, Zili [2 ,3 ]
Chen, Dunjun [2 ,3 ]
Zou, Zhigang [1 ,5 ]
Zhang, Rong [2 ,3 ]
机构：
[1] Nanjing Univ, Dept Phys, ERERC, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[4] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[5] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 26期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2955828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photoelectrochemical properties of InxGa1-xN/GaN (0 <= x <= 0.20) epitaxial films on sapphire (0001) substrates have been investigated. The flatband potential of InxGa1-xN is shifted to more positive voltages with increasing indium incorporation. In aqueous HBr solution, the turnover number of the In0.20Ga0.80N electrode reaches 847 after 4000 s illumination, which suggests that In0.20Ga0.80N has good photostability. Moreover, In0.20Ga0.80N shows highest visible-light response among InxGa1-xN (0 <= x <= 0.20) and the incident photon conversion efficiency is about 9% at 400-430 nm in the HBr solution. (C) 2008 American Institute of Physics.
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页数：3
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